Deposition and characterization of PECVD phosphorus doped silicon oxynitride layers for integrated optics applications


Share/Save/Bookmark

Hussein, M.G. and Wörhoff, K. and Sengo, G. and Driessen, A. (2005) Deposition and characterization of PECVD phosphorus doped silicon oxynitride layers for integrated optics applications. In: 15th European Conference on Chemical Vapor Deposition, EUROCVD-15, 5-9 September 2005, Bochum, Germany (pp. pp. 457-464).

open access
[img]
Preview
PDF
815kB
Abstract:Phosphorus-doped silicon oxynitride layers have been deposited by a Plasma Enhanced Chemical Vapor Deposition process from $N_20$, 2% $SiH_4/N_2$ and 5% $PH_3/Ar$ gaseous mixtures. The $PH_3/Ar$ flow rate was varied to investigate the effect of the dopant to the layer properties. As deposited and annealed (600, 800, 900 and 1000 °C) layers were characterized by Fourier transform infrared spectroscopy, Rutherford backscattering spectroscopy and spectroscopic ellipsometry. In this way the refractive index could be determined as well as the amount of hydrogen that is responsible for enhanced absorption in the 3rd telecommunication window around 1550 nm. The N-H bonds concentration was found to decrease with the phosphorus concentration. Furthermore the bonded hydrogen in the entire P-doped layers have been eliminated after annealing at 1000 °C, while undoped SiON layers require annealing at 1150 °C.
Item Type:Conference or Workshop Item
Faculty:
Electrical Engineering, Mathematics and Computer Science (EEMCS)
Research Group:
Link to this item:http://purl.utwente.nl/publications/64744
Export this item as:BibTeX
EndNote
HTML Citation
Reference Manager

 

Repository Staff Only: item control page

Metis ID: 228226