Systematic TLM Measurements of NiSi and PtSi Specific Contact Resistance to n- and p-Type Si in a Broad Doping Range

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Stavitski, N. and Dal, M.J.H. van and Lauwers, A. and Vrancken, C. and Kovalgin, A.Y. and Wolters, R.A.M. (2008) Systematic TLM Measurements of NiSi and PtSi Specific Contact Resistance to n- and p-Type Si in a Broad Doping Range. IEEE electron device letters, 29 (4). pp. 378-381. ISSN 0741-3106

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Abstract:We present the data on specific silicide-to-silicon contact resistance (ρc) obtained using optimized transmission-line model structures, processed for a broad range of various n- and p-type Si doping levels, with NiSi and PtSi as the silicides. These structures, despite being attractive candidates for embedding in the CMOS processes, have not been used for NiSi, which is the material of choice in modern technologies. In addition, no database for NiSi–silicon contact resistance exists, particularly for a broad range of doping levels. This letter provides such a database, using PtSi extensively studied earlier as a reference.
Item Type:Article
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Electrical Engineering, Mathematics and Computer Science (EEMCS)
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Link to this item:http://purl.utwente.nl/publications/64717
Official URL:http://dx.doi.org/10.1109/LED.2008.917934
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Metis ID: 250946