Digital Detection of Oxide Breakdown and Life-Time Extension in Submicron CMOS Technology

Acar, M. and Annema, A.-J. and Nauta, B. (2008) Digital Detection of Oxide Breakdown and Life-Time Extension in Submicron CMOS Technology. In: Proceedings of the 2008 IEEE International Solid- State Circuits Conference (ISSCC2008), 8-12 Feb 2008, San Francisco.

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Abstract:	An approach is introduced to extend the lifetime of high-voltage analog circuits in CMOS technologies based on redundancy, like that known for DRAMS. A large power transistor is segmented into N smaller ones in parallel. If a sub-transistor is broken, it is removed automatically from the compound transistor. The principleis demonstrated in an RF CMOS Power Amplifier (PA) in standard 1.2V 90nm CMOS.
Item Type:	Conference or Workshop Item
Faculty:	Electrical Engineering, Mathematics and Computer Science (EEMCS)
Research Group:	Integrated Circuit Design (ICD)
Link to this item:	http://purl.utwente.nl/publications/64625
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