Optimized deposition and structuring of reactively co-sputtered $AL_2O_3:Er$ waveguide layers with net optical gain

Bradley, J.D.B. and Geskus, D. and Blaauwendraat, T. and Ay, F. and Wörhoff, K. and Pollnau, M. (2007) Optimized deposition and structuring of reactively co-sputtered $AL_2O_3:Er$ waveguide layers with net optical gain. In: 12th Annual Symposium IEEE/LEOS Benelux, 17-18 December 2007, Brussels, Belgium.

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Abstract:	Growth of reactively co-sputtered $Al_2O_3$ layers and micro-structuring using reactive ion etching have been optimized, resulting in channel waveguides in the as-deposited layers with optical propagation losses as low as 0.21 dB/cm. For active functionality, Erdoped $Al_2O_3$ layers have also been deposited by co-sputtering from a metallic Er target. At relevant dopant levels ( $~10^{20}$ $cm^{-3})$ lifetimes of the $^{4}I_{13/2}$ level up to 7 ms have been measured and net optical gain of 0.7 dB/cm has been obtained in a 700-nm thick Erdoped $Al_2O_3$ waveguide. Investigation of active devices, such as lasers and amplifiers, exploiting the developed technology is on-going.
Item Type:	Conference or Workshop Item
Faculty:	Electrical Engineering, Mathematics and Computer Science (EEMCS)
Research Group:	Integrated Optical MicroSystems (IOMS)
Link to this item:	http://purl.utwente.nl/publications/64608
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Optimized deposition and structuring of reactively co-sputtered waveguide layers with net optical gain

Optimized deposition and structuring of reactively co-sputtered $AL_2O_3:Er$ waveguide layers with net optical gain