Optimized deposition and structuring of reactively co-sputtered $AL_2O_3:Er$ waveguide layers with net optical gain


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Bradley, J.D.B. and Geskus, D. and Blaauwendraat, T. and Ay, F. and Wörhoff, K. and Pollnau, M. (2007) Optimized deposition and structuring of reactively co-sputtered $AL_2O_3:Er$ waveguide layers with net optical gain. In: 12th Annual Symposium IEEE/LEOS Benelux, 17-18 December 2007, Brussels, Belgium (pp. pp. 107-110).

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Abstract:Growth of reactively co-sputtered $Al_2O_3$ layers and micro-structuring using reactive ion etching have been optimized, resulting in channel waveguides in the as-deposited layers with optical propagation losses as low as 0.21 dB/cm. For active functionality, Erdoped $Al_2O_3$ layers have also been deposited by co-sputtering from a metallic Er target. At relevant dopant levels ($~10^{20}$ $cm^{-3})$ lifetimes of the $^{4}I_{13/2}$ level up to 7 ms have been measured and net optical gain of 0.7 dB/cm has been obtained in a 700-nm thick Erdoped $Al_2O_3$ waveguide. Investigation of active devices, such as lasers and amplifiers, exploiting the developed technology is on-going.
Item Type:Conference or Workshop Item
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Electrical Engineering, Mathematics and Computer Science (EEMCS)
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Link to this item:http://purl.utwente.nl/publications/64608
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Metis ID: 245993