Cross-bidge Kelvin resistor (CBKR) structures for measurement of low contact resistances


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Stavitski, N. and Klootwijk, J.H. and Zeijl, H.W. van and Boksteen, B.K. and Kovalgin, A.Y. and Wolters, R.A.M. (2007) Cross-bidge Kelvin resistor (CBKR) structures for measurement of low contact resistances. In: 10th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors (SAFE), 29-30 Nov 2007, Veldhoven, The Netherlands (pp. pp. 551-554).

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Abstract:A convenient test structure for measurement of the specific contact resistance (ρc) of metal-semiconductor junctions is the CBKR structure. During last few decades the parasitic factors which may strongly affect the measurements accuracy for ρc < 10-6 Ω • cm2 have been sufficiently discussed and the minimum of the ρc to be measured using CBKR structures was estimated. We fabricated a set of CBKR structures with different geometries to confirm this limit experimentally. These structures were manufactured for metal-to-metal contacts. It was found that the extracted CBKR values were determined by dimensions of the two-metal stack in the contact area and sheet resistances of the metals used.
Index Terms—Contact resistance, cross-bridge Kelvin resistor (CBKR), sheet resistance, test structures, metal, silicon
Item Type:Conference or Workshop Item
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Electrical Engineering, Mathematics and Computer Science (EEMCS)
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Link to this item:http://purl.utwente.nl/publications/64583
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Metis ID: 245949