Cross-bidge Kelvin resistor (CBKR) structures for measurement of low contact resistances


Stavitski, N. and Klootwijk, J.H. and Zeijl, H.W. van and Boksteen, B.K. and Kovalgin, A.Y. and Wolters, R.A.M. (2007) Cross-bidge Kelvin resistor (CBKR) structures for measurement of low contact resistances. In: 10th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors (SAFE), 29-30 Nov 2007, Veldhoven, The Netherlands (pp. pp. 551-554).

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Abstract:A convenient test structure for measurement of the specific contact resistance (ρc) of metal-semiconductor junctions is the CBKR structure. During last few decades the parasitic factors which may strongly affect the measurements accuracy for ρc < 10-6 Ω • cm2 have been sufficiently discussed and the minimum of the ρc to be measured using CBKR structures was estimated. We fabricated a set of CBKR structures with different geometries to confirm this limit experimentally. These structures were manufactured for metal-to-metal contacts. It was found that the extracted CBKR values were determined by dimensions of the two-metal stack in the contact area and sheet resistances of the metals used.
Index Terms—Contact resistance, cross-bridge Kelvin resistor (CBKR), sheet resistance, test structures, metal, silicon
Item Type:Conference or Workshop Item
Electrical Engineering, Mathematics and Computer Science (EEMCS)
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