Low-temperature process steps for realization of non-volatile memory devices
Brunets, I. and Boogaard, A. and Aarnink, A.A.I. and Kovalgin, A.Y. and Wolters, R.A.M. and Holleman, J. and Schmitz, J. (2007) Low-temperature process steps for realization of non-volatile memory devices. In: 10th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors (SAFE), 29-30 Nov 2007, Veldhoven, The Netherlands.
|Abstract:||In this work, the low-temperature process steps required for the realization of nano-crystal non-volatile memory cells are discussed. An amorphous silicon film, crystallized using a diode pumped solid state green laser irradiating at 532 nm, is proposed as an active layer. The deposition of the subsequent functional layers (e.g., gate oxide) can be done using CVD and ALD reactors in a cluster tool. We show that a high nanocrystal density (Si-NC), required for a good functionality of the memory device, can be obtained by using disilane (Si2H6) or trisilane (Si3H8, known as Silcore®) as precursors for LPCVD instead of silane, at a deposition temperature of 325 °C. The nanocrystals are encapsulated with an ALD-Al2O3 layer (deposited at 300 °C), which serves as oxidation barrier. The passivation of the realized structure is done with an ALD-TiN layer deposited at 425 °C.|
In this work, we realized Al/TiN/Al2O3/Si-NC/SiO2/Si(100) multilayer floating-gate structures, where the crystallized amorphous silicon film was for the time being replaced by a mono-crystalline silicon wafer, and the gate oxide was thermally grown instead of a low-temperature PECVD oxide. The structures were characterized in terms of their performance as memory cells. In addition, the feasibility to use laser crystallization for improving the amorphous silicon films (prior to the gate oxide deposition) was explored.
|Item Type:||Conference or Workshop Item|
Electrical Engineering, Mathematics and Computer Science (EEMCS)
|Link to this item:||http://purl.utwente.nl/publications/64576|
|Export this item as:||BibTeX|
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