Anomalous Hall effect in anatase Co:TiO2 ferromagnetic semiconductor

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Ramaneti, R. and Lodder, J.C. and Jansen, R. (2007) Anomalous Hall effect in anatase Co:TiO2 ferromagnetic semiconductor. Applied physics letters, 91 . 012502. ISSN 0003-6951

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Abstract:We have investigated the effects of modification of the SrTiO3 /Co interface as well as the SrTiO3 barrier on
the tunnel magnetoresistance TMR of La0.67Sr0.33MnO3 /SrTiO3 /Co junctions. Modification was realized by
the introduction of one atomic layer of either TiO2 or SrO at the SrTiO3 /Co interface. Barriers with different
oxygen content were also studied. In these structures we have observed positive as well as negative TMR, with
a trend towards positive TMR for junctions with interfacial SrO and/or more oxygen-deficient barriers. This
work offers more insight into the SrTiO3 /Co tunnel spin polarization and its sign.
Item Type:Article
Copyright:© 2007 American Institute of Physics
Faculty:
Electrical Engineering, Mathematics and Computer Science (EEMCS)
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Link to this item:http://purl.utwente.nl/publications/64405
Official URL:http://dx.doi.org/10.1063/1.2751133
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