Anomalous Hall effect in anatase Co:TiO2 ferromagnetic semiconductor

Ramaneti, R. and Lodder, J.C. and Jansen, R. (2007) Anomalous Hall effect in anatase Co:TiO2 ferromagnetic semiconductor. Applied physics letters, 91 . 012502. ISSN 0003-6951

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Abstract:	We have investigated the effects of modification of the SrTiO3 /Co interface as well as the SrTiO3 barrier on the tunnel magnetoresistance TMR of La0.67Sr0.33MnO3 /SrTiO3 /Co junctions. Modification was realized by the introduction of one atomic layer of either TiO2 or SrO at the SrTiO3 /Co interface. Barriers with different oxygen content were also studied. In these structures we have observed positive as well as negative TMR, with a trend towards positive TMR for junctions with interfacial SrO and/or more oxygen-deficient barriers. This work offers more insight into the SrTiO3 /Co tunnel spin polarization and its sign.
Item Type:	Article
Copyright:	© 2007 American Institute of Physics
Faculty:	Electrical Engineering, Mathematics and Computer Science (EEMCS)
Research Group:	Semiconductor Components (SC)
Link to this item:	http://purl.utwente.nl/publications/64405
Official URL:	http://dx.doi.org/10.1063/1.2751133
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