Low loss, high contrast optical waveguides based on CMOS compatible LPCVD processing

Heideman, R.G. and Geuzebroek, D. and Leinse, A. and Melloni, A. and Morichetti, F. and Roeloffzen, C. and Meijerink, A. and Zhuang, L. and Etten van, W. and Klein, E. and Driessen, A. (2007) Low loss, high contrast optical waveguides based on CMOS compatible LPCVD processing. In: European Conference on Integrated Optics, ECIO 2007, 25-27 April 2007, Copenhagen, Denmark.

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Abstract:	A new class of integrated optical waveguide structures is presented, based on low cost CMOS compatible LPCVD processing. This technology allows for medium and high index contrast waveguides with very low channel attenuation. The geometry is basically formed by a rectangular cross-section silicon nitride $(Si_{3}N_{4})$ filled with and encapsulated by silicon dioxide $(SiO_{2})$ . The birefringence and minimal bend radius of the waveguide is completely controlled by the geometry of the waveguide layer structures. Experiments on typical geometries will be presented, showing excellent characteristics (channel attenuation ≤0.06 dB/cm, IL ≤0.6 dB, PDL ≤0.2 dB, Bg «1 x $10^{-3}$ , bend radius ≤500 μm).
Item Type:	Conference or Workshop Item
Faculty:	Electrical Engineering, Mathematics and Computer Science (EEMCS)
Research Group:	Telecommunication Engineering (TE)
Link to this item:	http://purl.utwente.nl/publications/64378
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