A power efficient 2Gb/s transceiver in 90nm CMOS for 10mm On-Chip interconnect

Mensink, E. and Schinkel, D. and Klumperink, E.A.M. and Tuijl van, A.J.M. and Nauta, B. (2007) A power efficient 2Gb/s transceiver in 90nm CMOS for 10mm On-Chip interconnect. In: ProRISC 2007, 18th Annual Workshop on Circuits, Systems and Signal Processing, 29-30 Nov 2007, Veldhoven, the Netherlands.

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Abstract:	Abstract—Global on-chip data communication is becoming a concern as the gap between transistor speed and interconnect bandwidth increases with CMOS process scaling. In this paper a low-swing transceiver for 10mm long 0.54μm wide on-chip interconnect is presented, which achieves a similar data rate as previous designs (a few Gb/s), but at much lower power than recently published work. Both low static power and low dynamic power (low energy per bit) is aimed for. A capacitive pre-emphasis transmitter lowers the voltage swing and increases the bandwidth using a simple inverter based transceiver and capacitive coupling to the interconnect. The receiver uses Decision Feedback Equalization with a power-efficient continuous-time feedback filter. A low power latch-type voltage sense amplifier is used. The transceiver, fabricated in a 1.2V 90nm CMOS process, achieves 2Gb/s. It consumes only 0.28pJ/b, which is 7 times lower than earlier work.
Item Type:	Conference or Workshop Item
Faculty:	Electrical Engineering, Mathematics and Computer Science (EEMCS)
Research Group:	Integrated Circuit Design (ICD)
Link to this item:	http://purl.utwente.nl/publications/64294
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