Growth and surface characterization of piezoelectric AlN thin films on silicon (100) and (110) substrates


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Saravanan, S. and Keim, E.G. and Krijnen, G.J.M. and Elwenspoek, M.C. (2005) Growth and surface characterization of piezoelectric AlN thin films on silicon (100) and (110) substrates. In: Microscopy of Semiconducting Materials. Springer Proceedings in Physics, 107 . Springer, pp. 75-78. ISBN 9783540319146

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Abstract:This work investigates the fundamental growth of c-axis oriented piezoelectric AlN thin films by RF reactive sputtering on p-type (100) and (110) silicon substrates. Substrates are treated with a 1% HF solution before deposition to remove the native oxide followed by backsputtering using argon ions. X-ray diffraction shows a (0001) oriented columnar texture of AlN grains which is the preferred orientation for piezoelectric applications. TEM shows the presence of a 4 nm thick semi-crystalline interface between silicon and the AlN layer. A basic growth mechanism is proposed from microstructural observations.
Item Type:Book Section
Copyright:© 2005 Springer
Faculty:
Electrical Engineering, Mathematics and Computer Science (EEMCS)
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Link to this item:http://purl.utwente.nl/publications/64274
Official URL:http://www.springer.com/978-3-540-31914-6
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