Low-frequency noise in hot-carrier degraded nMOSFETs

Salm, Cora and Hoekstra, Eric and Kolhatkar, Jay S. and Hof, André J. and Wallinga, Hans and Schmitz, Jurriaan (2007) Low-frequency noise in hot-carrier degraded nMOSFETs. Microelectronics Reliability, 47 (4-5). pp. 577-580. ISSN 0026-2714

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Abstract:	This paper discusses the low-frequency (LF) noise in submicron nMOSFETs under controlled transistor aging by hot-carrier stress. Both traditional, steady-state LF noise as well as the LF noise under periodic large-signal excitation were found to increase upon device degradation, for both hydrogen passivated and deuterium passivated Si–SiO2 interfaces. As hot-carrier degradation is slower in deuterium- annealed MOSFETs, so is the increase of the noise in these devices. The noise-suppressing effect of periodic OFF switching is gradually lost during hot-carrier degradation, as the LF noise under periodic large-signal excitation increases more rapidly than the LF noise in steady-state.
Item Type:	Article
Copyright:	© 2007 Elsevier Science
Faculty:	Electrical Engineering, Mathematics and Computer Science (EEMCS)
Research Group:	Semiconductor Components (SC)
Link to this item:	http://purl.utwente.nl/publications/64006
Official URL:	http://dx.doi.org/10.1016/j.microrel.2007.01.044
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