Low-temperature LPCVD of Si nanocrystals from disilane and trisilane (Silcore®) embedded in ALD-alumina for non-volatile memory devices

Share/Save/Bookmark

Brunets, I. and Aarnink, A.A.I. and Boogaard, A. and Kovalgin, A.Y. and Wolters, R.A.M. and Holleman, J. and Schmitz, J. (2007) Low-temperature LPCVD of Si nanocrystals from disilane and trisilane (Silcore®) embedded in ALD-alumina for non-volatile memory devices. Surface & Coatings Technology, 201 . pp. 9209-9214. ISSN 0257-8972

[img]PDF
Restricted to UT campus only
: Request a copy
917Kb
Abstract:Non-volatile memory devices are realized using CVD and ALD of all active layers in a cluster tool. The floating gate consists of silicon nanocrystals. A high nanocrystal density was obtained through an enhanced nucleation rate by using disilane (Si2H6) as well as trisilane (Si3H8, known as Silcore®) as precursors for low-pressure chemical vapor deposition (instead of silane). The deposition temperature was 300–325 °C and the deposition pressure ranged between 0.1 and 10 mbar. To prevent oxidation of the nanocrystals, they were encapsulated directly after deposition with a 10-nm thick ALD-grown Al2O3 layer (blocking oxide). The deposition of Si-nanocrystals as a function of substrate temperature, precursor flow rate and total gas pressure was explored. Appreciable retention and endurance were measured on realized Al/TiN/Al2O3/Si-nanocrystal/SiO2/ Si(100) floating-gate capacitor structures.
Item Type:Article
Faculty:
Electrical Engineering, Mathematics and Computer Science (EEMCS)
Research Group:
Link to this item:http://purl.utwente.nl/publications/63985
Official URL:http://dx.doi.org/10.1016/j.surfcoat.2007.03.035
Export this item as:BibTeX
EndNote
HTML Citation
Reference Manager

 

Repository Staff Only: item control page

Metis ID: 241561