A pillar-shaped antifuse-based silicon chemical sensor and actuator

Share/Save/Bookmark

Kovalgin, A.Y. and Holleman, J. and Iordache, G. (2007) A pillar-shaped antifuse-based silicon chemical sensor and actuator. IEEE sensors journal, 7 (1). pp. 18-27. ISSN 1530-437X

[img]
Preview
PDF
1552Kb
Abstract:We designed a silicon-processing compatible, simple, and cheap device operating at a power down to sub- W. It has a pillar-shaped structure with a nanoscopic (10–100 nm in size) conductive link (the so-called antifuse) created between two electrodes separated by a SiO2 layer. The device exhibits a diode-like behavior due to the depletion effects in the mono-silicon pillar. The device is capable of maintaining a microscopic hot-surface area of several hundreds degrees centigrade. The size of the hot area and its temperature can be manipulated by the sign of the applied bias.
Two different heat-generation mechanisms (i.e., dissipation at a resistor and a non-radiative recombination of carriers) are proposed and modelled. Such a device can be used as a heat source, as a light source, and as a sensitive detector of light and heat. In this paper, we describe thermo-electrical properties of the fabricated devices and demonstrate their feasibility to perform as gas-, adsorption-, desorption sensors, and as units for activating chemisorption/decomposition of gaseous precursors, i.e., micro-reactors.
Item Type:Article
Copyright:© IEEE
Faculty:
Electrical Engineering, Mathematics and Computer Science (EEMCS)
Research Group:
Link to this item:http://purl.utwente.nl/publications/63975
Official URL:http://dx.doi.org/10.1109/JSEN.2006.888602
Export this item as:BibTeX
EndNote
HTML Citation
Reference Manager

 

Repository Staff Only: item control page

Metis ID: 242079