Deposition of TiN films in a batch reactor

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Hasper, Albert and Snijders, Gert-Jan and Vandezande, Lieve and De Blank, Marinus J. and Bankras, Radko G. (2006) Deposition of TiN films in a batch reactor. Patent.

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Abstract:Titanium nitride (TiN) films are formed in a batch reactor using titanium chloride (TiCl4) and ammonia (NH3) as precursors. The TiCl4 is flowed into the reactor in temporally separated pulses. The NH3 can also be flowed into the reactor in temporally spaced pulses which alternate with the TiCl4 pulses, or the NH3 can be flowed continuously into the reactor while the TiCl4 is introduced in pulses. The resulting TiN films exhibit low resistivity and good uniformity.
Item Type:Patent
Faculty:
Electrical Engineering, Mathematics and Computer Science (EEMCS)
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Link to this item:http://purl.utwente.nl/publications/63891
Official URL:http://v3.espacenet.com/textdoc?IDX=US2007077775
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Metis ID: 238731