Electrical characterization of thin film ferroelectric capacitors


Tiggelman, M.P.J. and Reimann, K. and Klee, M. and Beelen, D. and Keur, W. and Schmitz, J. and Hueting, R.J.E. (2006) Electrical characterization of thin film ferroelectric capacitors. In: Proceedings of the 9th annual workshop on Semiconductor Advances for Future Electronics and Sensors 2006, 23-24 Nov 2006, Veldhoven, The Netherlands (pp. pp. 439-443).

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Abstract:Tunable capacitors can be used to facilitate the reduction of components in wireless technologies. The tunability of the capacitors is caused by the sensitivity of the relative
dielectric constant to a change in polarization with electric field.
Thin film ferroelectric MIM capacitors on silicon offer a re-use of electronic circuitry, low tuning voltages, a high capacitance density, a low cost, a presence of bulk acoustic wave resonance(s) and decoupling functionality. The basic operation and measurement principles are outlined. To assess the performance in the microwave frequency range, MIM test structures1, with a barium strontium titanate dielectric, have been successfully
processed, and measured. The electrical characterization of
tunable capacitors is demonstrated using a 1-Port Advantest
R3767CG VNA in the frequency range of 10 MHz – 8 GHz.
Item Type:Conference or Workshop Item
Electrical Engineering, Mathematics and Computer Science (EEMCS)
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