Electrical characterization of thin film ferroelectric capacitors


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Tiggelman, M.P.J. and Reimann, K. and Klee, M. and Beelen, D. and Keur, W. and Schmitz, J. and Hueting, R.J.E. (2006) Electrical characterization of thin film ferroelectric capacitors. In: Proceedings of the 9th annual workshop on Semiconductor Advances for Future Electronics and Sensors 2006, 23-24 Nov 2006, Veldhoven, The Netherlands (pp. pp. 439-443).

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Abstract:Tunable capacitors can be used to facilitate the reduction of components in wireless technologies. The tunability of the capacitors is caused by the sensitivity of the relative
dielectric constant to a change in polarization with electric field.
Thin film ferroelectric MIM capacitors on silicon offer a re-use of electronic circuitry, low tuning voltages, a high capacitance density, a low cost, a presence of bulk acoustic wave resonance(s) and decoupling functionality. The basic operation and measurement principles are outlined. To assess the performance in the microwave frequency range, MIM test structures1, with a barium strontium titanate dielectric, have been successfully
processed, and measured. The electrical characterization of
tunable capacitors is demonstrated using a 1-Port Advantest
R3767CG VNA in the frequency range of 10 MHz – 8 GHz.
Item Type:Conference or Workshop Item
Faculty:
Electrical Engineering, Mathematics and Computer Science (EEMCS)
Research Group:
Link to this item:http://purl.utwente.nl/publications/63762
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