Cross-Bridge Kelvin Resistor (CBKR) structures for silicide-semiconductor junctions characterization


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Stavitski, N. and Dal, M.J.H. van and Klootwijk, J.H. and Wolters, R.A.M. and Kovalgin, A.Y. and Schmitz, J. (2006) Cross-Bridge Kelvin Resistor (CBKR) structures for silicide-semiconductor junctions characterization. In: Proceedings of the 9th annual workshop on Semiconductor Advances for Future Electronics and Sensors 2006, 23-24 Nov 2006, Veldhoven, The Netherlands (pp. pp. 436-438).

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Abstract:Analyzing the contact geometry factors for the conventional CBKR structures, it appeared that the contact geometries conventionally used for the metal-to-silicide contact resistance measurements were not always satisfactory to reveal the specific contact resistance values. To investigate these geometry-related issues, we therefore designed and realized new CBKR structures having a large variety of contact shapes, overlaps and diffusion area widths. The process flow was adjusted for self-aligned silicides as well as for planar silicide structures.
Item Type:Conference or Workshop Item
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Electrical Engineering, Mathematics and Computer Science (EEMCS)
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Link to this item:http://purl.utwente.nl/publications/63761
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