Interface trap response to RF charge pumping measurements

Sasse, G.T. and Schmitz, J. (2006) Interface trap response to RF charge pumping measurements. In: 9th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors, 2006, 23-24 Nov 2006, Veldhoven, The Netherlands.

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Abstract:	In this paper we will discuss the interface trap response to CP measurements at RF gate excitation. An explanation is given on how to accurately perform RF CP measurements, using an improved technique. Based on the observed response of the pumped charge per cycle with increasing frequencies a model is developed that is able to explain the observed roll-off. It is an extension to the well known classical model and it takes into account both the limited capture rates as well as a distribution of traps in the oxide.
Item Type:	Conference or Workshop Item
Faculty:	Electrical Engineering, Mathematics and Computer Science (EEMCS)
Research Group:	Semiconductor Components (SC)
Link to this item:	http://purl.utwente.nl/publications/63760
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