Memory devices with encapsulated Si nano-crystals: Realization and Characterization.


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Brunets, I. and van Hemert, T. and Boogaard, A. and Aarnink, A.A.I. and Kovalgin, A.Y. and Holleman, J. and Schmitz, J. (2006) Memory devices with encapsulated Si nano-crystals: Realization and Characterization. In: Proceedings of the 9th annual workshop on Semiconductor Advances for Future Electronics and Sensors 2006, 23-24 Nov 2006, Veldhoven, The Netherlands.

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Abstract:In this work, the advanced non-volatile memory design based on silicon nano-crystals instead of conventional continuous floating gate was explored The multilayer Al/TiN/Al2O3/Si-nano-crystals/Al2O3/SiO2/Si(100) structure was realized. The functional layer stack (TiN/Al2O3/Si-nano-crystals/Al2O3) was deposited in a cluster system without vacuum break, using atomic-layer-deposition (ALD) (Al2O3 and TiN films) and low-pressure chemical-vapor-deposition (LPCVD) (Si nano-crystals) methods. The details of the process flow are discussed. The physical characterization and the electrical measurements of the multilayer structure are presented.
Item Type:Conference or Workshop Item
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Electrical Engineering, Mathematics and Computer Science (EEMCS)
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