Low-Frequency noise in hot-carrier degraded MOSFETs

Share/Save/Bookmark

Salm, C. and Hoekstra, E. and Kolhatkar, J.S. and Hof, A.J. and Wallinga, H. and Schmitz, J. (2006) Low-Frequency noise in hot-carrier degraded MOSFETs. In: 14th workshop on dielectrics in microelectronics WODIM, 26-28 june 2006, Santa Tecla, Italy.

[img]PDF
Restricted to UT campus only
: Request a copy
114Kb
Abstract:Low frequency (LF) noise in MOSFETs originates mainly from traps at the Si/SiO2 interface. As hot carrier (HC) stressing is known to increase the interface trap density, the LF noise is also expected to increase. In this paper we quantify the noise increase resulting from hot carrier degradation. Furthermore we investigate two methods that could reduce LF noise, bias switching and deuterium passivation. The impact of these two measures on noise after hot carrier stressing are quantified for the first time.
Item Type:Conference or Workshop Item
Faculty:
Electrical Engineering, Mathematics and Computer Science (EEMCS)
Research Group:
Link to this item:http://purl.utwente.nl/publications/63750
Export this item as:BibTeX
EndNote
HTML Citation
Reference Manager

 

Repository Staff Only: item control page

Metis ID: 237696