Low-Frequency noise in hot-carrier degraded MOSFETs


Salm, C. and Hoekstra, E. and Kolhatkar, J.S. and Hof, A.J. and Wallinga, H. and Schmitz, J. (2006) Low-Frequency noise in hot-carrier degraded MOSFETs. In: 14th workshop on dielectrics in microelectronics WODIM, 26-28 june 2006, Santa Tecla, Italy (pp. pp. 64-65).

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Abstract:Low frequency (LF) noise in MOSFETs originates mainly from traps at the Si/SiO2 interface. As hot carrier (HC) stressing is known to increase the interface trap density, the LF noise is also expected to increase. In this paper we quantify the noise increase resulting from hot carrier degradation. Furthermore we investigate two methods that could reduce LF noise, bias switching and deuterium passivation. The impact of these two measures on noise after hot carrier stressing are quantified for the first time.
Item Type:Conference or Workshop Item
Electrical Engineering, Mathematics and Computer Science (EEMCS)
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Link to this item:http://purl.utwente.nl/publications/63750
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