In Situ Reflective High-Energy Electron Diffraction Analysis During the Initial Stage of a Trimethylaluminum/Water ALD Process

Bankras, R.G. and Holleman, J. and Schmitz, J. and Sturm, J.M. and Zinine, A. and Wormeester, H. and Poelsema, B. (2006) In Situ Reflective High-Energy Electron Diffraction Analysis During the Initial Stage of a Trimethylaluminum/Water ALD Process. Chemical Vapor Deposition, 12 (5). pp. 275-280. ISSN 0948-1907

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Abstract:	the process, especially of the initial stage of the deposition. In this paper the first results obtained from in situ reflective highenergy electron diffraction (RHEED) measurements during the ALD of $Al_2O_3$ on Si(001), using $Al(CH_3)_3$ and $H_2O$ as precursors, are presented. The goal of this work is to show the feasibility of using a surface-sensitive analysis technique to study the surface chemistry during ALD. The results show the expected decrease in reflected intensity on deposition of aluminum atoms and a recovery of intensity, attributed to removal of methyl groups from the surface, on exposure to $H_2O$ . Growth initiation by TMA exposure, and subsequent growth inhibition are observed. A discrete time model of ALD is used to analyze the measured decay in reflected intensity.
Item Type:	Article
Faculty:	Electrical Engineering, Mathematics and Computer Science (EEMCS) Science and Technology (TNW)
Research Group:	Semiconductor Components (SC) Physics of Interfaces and Nanomaterials (PIN)
Link to this item:	http://purl.utwente.nl/publications/63656
Official URL:	http://dx.doi.org/10.1002/cvde.200506433
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