Charge Pumping at radio Frequencies: Methodology, Trap Response and Application


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Sasse, G.T. and Schmitz, J. (2006) Charge Pumping at radio Frequencies: Methodology, Trap Response and Application. In: 44th Annual IEEE International Reliability Physics Symposium Proceedings, IRPS, 26-30 March 2006, San Jose, CA, USA (pp. pp. 627-628).

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Abstract:The charge pumping (CP) technique is known for its high accuracy of determining the interface state density on MOS devices [1]. With reducing oxide thickness, the tunneling current can dramatically disturb the accuracy of the obtained CP results [2]. In this paper we discuss the applicability of the RF CP technique for extracting the interface state density on these dielectrics. We present an improved measurement approach, new data, and an improved model for the description of the RF CP response of fast interface states.
Item Type:Conference or Workshop Item
Copyright:© 2006 IEEE
Faculty:
Electrical Engineering, Mathematics and Computer Science (EEMCS)
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Link to this item:http://purl.utwente.nl/publications/63585
Official URL:http://dx.doi.org/10.1109/RELPHY.2006.251295
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