Reduced temperature dependence of hot carrier degradation in deuterated nMOSFETs

Salm, C. and Hof, A.J. and Kuper, F.G. and Schmitz, J. (2006) Reduced temperature dependence of hot carrier degradation in deuterated nMOSFETs. Microelectronics Reliability, 46 (9-11). pp. 1617-1622. ISSN 0026-2714

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Abstract:	Deuterated oxides exhibit prolonged hot carrier lifetimes at room temperature. We report evidence that this improved hot carrier hardness exists over the temperature range between -25 °C and 200 °C. However, the benefit of deuterium incorporation deceases with increasing stress temperature. Furthermore the $V_T$ -shift shows a remarkable absence of temperature dependence for the deuterated samples. The results are compared to the existing vibration-relaxation model.
Item Type:	Article
Copyright:	© 2006 Elsevier Science
Faculty:	Electrical Engineering, Mathematics and Computer Science (EEMCS)
Research Group:	Semiconductor Components (SC)
Link to this item:	http://purl.utwente.nl/publications/63431
Official URL:	http://dx.doi.org/10.1016/j.microrel.2006.08.004
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