Reduced temperature dependence of hot carrier degradation in deuterated nMOSFETs

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Salm, C. and Hof, A.J. and Kuper, F.G. and Schmitz, J. (2006) Reduced temperature dependence of hot carrier degradation in deuterated nMOSFETs. Microelectronics Reliability, 46 (9-11). pp. 1617-1622. ISSN 0026-2714

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Abstract:Deuterated oxides exhibit prolonged hot carrier lifetimes at room temperature. We report evidence that this improved hot carrier hardness exists over the temperature range between -25 °C and 200 °C. However, the benefit of deuterium incorporation deceases with increasing stress temperature. Furthermore the $V_T$ -shift shows a remarkable absence of temperature dependence for the deuterated samples. The results are compared to the existing vibration-relaxation model.
Item Type:Article
Copyright:© 2006 Elsevier Science
Faculty:
Electrical Engineering, Mathematics and Computer Science (EEMCS)
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Link to this item:http://purl.utwente.nl/publications/63431
Official URL:http://dx.doi.org/10.1016/j.microrel.2006.08.004
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Metis ID: 238168