Silicon light-emitting diode antifuse: properties and devices

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Le Minh, P. and Holleman, J. (2006) Silicon light-emitting diode antifuse: properties and devices. Journal of physics D: applied physics, 39 . pp. 3749-3754. ISSN 0022-3727

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Abstract:This paper reviews our research on the silicon light-emitting diode antifuse, a tiny source featuring a full white-light spectrum. Optical and electrical properties of the device are discussed together with the modelling of the
spectral emission, explaining the emitting mechanism of the device. An estimation of the antifuse’s internal power conversion efficiency reveals a reasonable value of at least 10−5. Photochemical effect on two types of
photoresists were carried out showing a clear impact of the emitted photons in the near ultraviolet range. The two integrated device prototypes, namely the opto-isolator which communicates optically and the microscale
opto-fluidic device which senses the difference in the refractive indices of liquids, indicate that the light-emitting diode antifuse has the potential for sensor and actuator applications.
(Some figures in this article are in colour only in the electronic version)
Item Type:Article
Faculty:
Electrical Engineering, Mathematics and Computer Science (EEMCS)
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Link to this item:http://purl.utwente.nl/publications/63430
Official URL:http://dx.doi.org/10.1088/0022-3727/39/17/006
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