Temperature dependence of magnetocurrent in a magnetic tunnel transistor

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Park, B.G. and Banerjee, T. and Min, B.C. and Sanderink, J.G.M. and Lodder, J.C. and Jansen, R. (2005) Temperature dependence of magnetocurrent in a magnetic tunnel transistor. Journal of applied physics, 98 . pp. 103701-1. ISSN 0021-8979

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Abstract:The temperature dependence of magnetocurrent MC and transfer ratio has been investigated in a magnetic tunnel transistor MTT with a ferromagnetic FM emitter of Co or Ni80Fe20. MTT devices of sizes ranging from 10 to 100 m in diameter were fabricated using a standard photolithography process and predefined Si substrates. This reduces the edge leakage current across the collector Schottky diode and enables room-temperature operation. For the MTT with both Co and Ni80Fe20 emitter, we obtain a MC of about 80% at room temperature. This corresponds to a tunnel spin polarization of the FM emitter/Al2O3 interface of 29% at 1 V, demonstrating that the tunnel current is still spin-polarized at a high bias voltage.
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Electrical Engineering, Mathematics and Computer Science (EEMCS)
Link to this item:http://purl.utwente.nl/publications/63023
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