Low-field magnetocurrent above 200% in a spin-valve transistor at room temperature

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Anil Kumar, P.S. and Jansen, R. and Erve, O.M.J. van 't and Vlutters, R. and Haan, P. de and Lodder, J.C. (2000) Low-field magnetocurrent above 200% in a spin-valve transistor at room temperature. Journal of Magnetism and Magnetic Materials, 214 (1-2). pp. 1-6. ISSN 0304-8853

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Abstract:A spin-valve transistor (SVT) that employs hot electrons is shown to exhibit a huge magnetotransport effect at room temperature in small magnetic fields. The SVT is a ferromagnet-semiconductor hybrid structure in which hot electrons are injected into a NiFe/Au/Co spin valve, and collected on the other side with energy and momentum selection. This makes the collector current extremely sensitive to spin-dependent scattering. The hot-electron current output of the device changes by more than a factor of three in magnetic fields of only a few Oe, corresponding to a magnetocurrent above 200% at room temperature.
Item Type:Article
Copyright:© 2000evier
Faculty:
Electrical Engineering, Mathematics and Computer Science (EEMCS)
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Link to this item:http://purl.utwente.nl/publications/62984
Official URL:http://dx.doi.org/10.1016/S0304-8853(00)00052-4
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