The spin-valve transistor: fabrication, characterization and physics

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Jansen, R. and Erve van 't, O.M.J. and Kim, S.D. and Vlutters, R. and Anil Kumar, P.S. and Lodder, J.C. (2001) The spin-valve transistor: fabrication, characterization and physics. Journal of Applied Physics, 89 (11). pp. 7431-7436. ISSN 0021-8979

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Abstract:An overview is given of the fabrication, basic properties, and physics of the spin-valve transistor. We describe the layout of this three-terminal ferromagnet/semiconductor hybrid device, as well as the operating principle. Fabrication technologies are discussed, including vacuum metal bonding. We characterize properties of the device relevant for possible applications in magneto-electronics, such as relative magnetic response, output current, and noise behavior. Furthermore, we illustrate the unique possibilities of the spin-valve transistor for fundamental studies of the physics of hot-electron spin transport in magnetic thin film structures.
Item Type:Article
Copyright:© 2001 American Institute of Physics
Faculty:
Electrical Engineering, Mathematics and Computer Science (EEMCS)
Research Group:
Link to this item:http://purl.utwente.nl/publications/62968
Official URL:http://link.aip.org/link/doi/10.1063/1.1357857
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Metis ID: 203817