Spin-valve transistors with high magnetocurrent and 40 μA output current

Jansen, R. and Gokcan, H. and Erve van 't, O.M.J. and Postma, F.M. and Lodder, J.C. (2004) Spin-valve transistors with high magnetocurrent and 40 μA output current. Journal of Applied Physics, 95 (11). pp. 6927-6929. ISSN 0021-8979

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Abstract:	The electrical characteristics of silicon-based spin-valve transistors are reported, focusing on how the output current and magnetocurrent depend on the magnitude of the emitter current. Transistors with a different combination of Schottky barriers ~Si/Au and Si/Cu! were used. The collector current rapidly increases with emitter current, without significant loss of magnetocurrent. Spin-valve transistors with magnetocurrent around 400% and high output current up to 40 mA are obtained.
Item Type:	Article
Copyright:	© 2004 American Institute of Physics
Faculty:	Electrical Engineering, Mathematics and Computer Science (EEMCS)
Research Group:	Transducers Science and Technology (TST)
Link to this item:	http://purl.utwente.nl/publications/62966
Official URL:	http://link.aip.org/link/doi/10.1063/1.1687258
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