Comment on "Giant magnetocurrent exceeding 3400% in magnetic tunnel transistors with spin-valve base layers" [Appl. Phys. Lett. 83, 951 (2003)]

Share/Save/Bookmark

Jansen, R. and Erve, O.M.J. van 't and Postma, F.M. and Lodder, J.C. (2004) Comment on "Giant magnetocurrent exceeding 3400% in magnetic tunnel transistors with spin-valve base layers" [Appl. Phys. Lett. 83, 951 (2003)]. Applied physics letters, 84 (21). pp. 4337-4338. ISSN 0003-6951

[img] PDF
Restricted to UT campus only
: Request a copy
32kB
Abstract:In a recent letter, it was reported that a magnetic tunnel transistor (MTT) with a spin-valve base can exhibit high magnetocurrent (MC) as well as output collector current in the microampere regime. While the presented experimental results are sound and unambiguous, the comparison with the spin-valve transistor (SVT) is not. In this comment, we wish to address this by separately comparing the output current, transfer ratio, and MC of both devices.
Item Type:Article
Additional information:Imported from SMI Reference manager
Copyright:© 2004 American Institute of Physics
Faculty:
Electrical Engineering, Mathematics and Computer Science (EEMCS)
Link to this item:http://purl.utwente.nl/publications/62964
Official URL:http://dx.doi.org/10.1063/1.1739521
Export this item as:BibTeX
EndNote
HTML Citation
Reference Manager

 

Repository Staff Only: item control page

Metis ID: 218544