Comment on "Giant magnetocurrent exceeding 3400% in magnetic tunnel transistors with spin-valve base layers" [Appl. Phys. Lett. 83, 951 (2003)]

Jansen, R. and Erve van 't, O.M.J. and Postma, F.M. and Lodder, J.C. (2004) Comment on "Giant magnetocurrent exceeding 3400% in magnetic tunnel transistors with spin-valve base layers" [Appl. Phys. Lett. 83, 951 (2003)]. Applied physics letters, 84 (21). pp. 4337-4338. ISSN 0003-6951

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Abstract:	In a recent letter, it was reported that a magnetic tunnel transistor (MTT) with a spin-valve base can exhibit high magnetocurrent (MC) as well as output collector current in the microampere regime. While the presented experimental results are sound and unambiguous, the comparison with the spin-valve transistor (SVT) is not. In this comment, we wish to address this by separately comparing the output current, transfer ratio, and MC of both devices.
Item Type:	Article
Copyright:	© 2004 American Institute of Physics
Faculty:	Electrical Engineering, Mathematics and Computer Science (EEMCS)
Link to this item:	http://purl.utwente.nl/publications/62964
Official URL:	http://dx.doi.org/10.1063/1.1739521
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