Transfer ratio of the spin-valve transistor

Share/Save/Bookmark

Erve, O.M.J. van 't and Vlutters, R. and Anil Kumar, P.S. and Kim, S.D. and Postma, F.M. and Jansen, R. and Lodder, J.C. (2002) Transfer ratio of the spin-valve transistor. Applied physics letters, 80 . pp. 3787-3789. ISSN 0003-6951

[img] PDF
Restricted to UT campus only
: Request a copy
46kB
Abstract:We describe the factors that control the transfer ratio of the spin-valve transistor. An increase in transfer ratio is obtained by a systematic variation of the height of emitter and collector Schottky barrier, and of the nonmagnetic metals. Next, we found that in some cases, a thicker base leads to a higher transfer ratio. Finally, the thickness of the magnetic layers in the Ni 80 Fe 20 /Au/Co spin-valve base can be optimized for a maximum absolute change of collector current. An overall increase by a factor of 24 was achieved, without loss of the magnetocurrent.
Item Type:Article
Additional information:Imported from SMI Reference manager
Faculty:
Electrical Engineering, Mathematics and Computer Science (EEMCS)
Link to this item:http://purl.utwente.nl/publications/62954
Export this item as:BibTeX
EndNote
HTML Citation
Reference Manager

 

Repository Staff Only: item control page

Metis ID: 206176