Transfer ratio of the spin-valve transistor

van 't Erve, O.M.J. and Vlutters, R. and Anil Kumar, P.S. and Kim, S.D. and Postma, F.M. and Jansen, R. and Lodder, J.C. (2002) Transfer ratio of the spin-valve transistor. Applied physics letters, 80 . pp. 3787-3789. ISSN 0003-6951

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Abstract:	We describe the factors that control the transfer ratio of the spin-valve transistor. An increase in transfer ratio is obtained by a systematic variation of the height of emitter and collector Schottky barrier, and of the nonmagnetic metals. Next, we found that in some cases, a thicker base leads to a higher transfer ratio. Finally, the thickness of the magnetic layers in the Ni 80 Fe 20 /Au/Co spin-valve base can be optimized for a maximum absolute change of collector current. An overall increase by a factor of 24 was achieved, without loss of the magnetocurrent.
Item Type:	Article
Faculty:	Electrical Engineering, Mathematics and Computer Science (EEMCS)
Link to this item:	http://purl.utwente.nl/publications/62954
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