A highly sensitive spin-valve transistor


Erve, O.M.J. van 't and Vlutters, R. and Anil Kumar, P.S. and Kim, S.D. and Jansen, R. and Lodder, J.C. (2001) A highly sensitive spin-valve transistor. In: G.C. Hadjipanayis (Ed.), Magnetic Storage Systems beyond 2000. NATO SCIENCE SERIES, II: Ma (41). Kluwer Academic Publishers, Dordrecht, pp. 441-444. ISBN 9781402001178

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Abstract:In this paper we present a spin-valve transistor made with a silicon on insulator wafer as emitter and a double sided polished Si wafer as collector. Using vacuum metal bonding we obtain a three terminal device in which a spin-valve layer is sandwiched between two Si wafers. We measure a 217% change in the collector current with magnetic field using a spin valve that shows only 0.5% resistance change in a current in plane measurement.
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Electrical Engineering, Mathematics and Computer Science (EEMCS)
Link to this item:http://purl.utwente.nl/publications/62952
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Metis ID: 201566