Tunnel spin polarization of Ni80Fe20/SiO2 probed with a magnetic tunnel transistor

Share/Save/Bookmark

Park, B.G. and Banerjee, T. and Min, B.C. and Lodder, J.C. and Jansen, R. (2006) Tunnel spin polarization of Ni80Fe20/SiO2 probed with a magnetic tunnel transistor. Physical Review B: Condensed matter and materials physics, 73 (17). p. 172402. ISSN 1098-0121

[img]
Preview
PDF
74Kb
Abstract:The tunnel spin polarization of Ni80Fe20/SiO2 interfaces has been investigated using a magnetic tunnel transistor (MTT). The MTT with a Ni80Fe20/SiO2 emitter shows a magnetocurrent of 74% at 100 K, corresponding to a tunnel spin polarization of the Ni80Fe20/SiO2 interface of 27%. This is only slightly lower than the value of 34% for Ni80Fe20/Al2O3 interfaces determined in similar MTT structures. This suggests that SiO2 can be applied in semiconductor spintronic devices, for example in ferromagnet/SiO2/Si tunnel contacts for spin injection.

Item Type:Article
Copyright:© 2006 American Physical Society
Faculty:
Electrical Engineering, Mathematics and Computer Science (EEMCS)
Research Group:
Link to this item:http://purl.utwente.nl/publications/62912
Official URL:http://dx.doi.org/10.1103/PhysRevB.73.172402
Export this item as:BibTeX
EndNote
HTML Citation
Reference Manager

 

Repository Staff Only: item control page

Metis ID: 238063