An electron-multiplying ‘Micromegas’ grid made in silicon wafer post-processing technology


Chefdeville, M. and Colas, P. and Giomataris, Y. and Graaf, H. van der and Heijne, E.H.M. and Putten, S. van der and Salm, C. and Schmitz, J. and Smits, S.M. and Timmermans, J. and Visschers, J.L. (2005) An electron-multiplying ‘Micromegas’ grid made in silicon wafer post-processing technology. Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 556 (2). pp. 490-494. ISSN 0168-9002

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Abstract:A technology for manufacturing an aluminium grid onto a silicon wafer has been developed. The grid is fixed parallel and precisely to the wafer (anode) surface at a distance of 50 mm by means of insulating pillars. When some 400V are applied between the grid and (anode) wafer, gas multiplication occurs: primary electrons from the drift space above the grid enter the holes and cause electron avalanches in the high-field region between the grid and the anode. Production and operational characteristics of the device are described. With this newly developed technology, CMOS (pixel) readout chips can be covered with a gas multiplication grid. Such a chip forms, together with the grid, an integrated device which can be applied as readout in a wide field of gaseous detectors.
Item Type:Article
Copyright:© 2005 Elsevier
Electrical Engineering, Mathematics and Computer Science (EEMCS)
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