Characterisation and passivation of interface defects in (1 0 0)/Si/SiO2/HfO2/TiN gate stacks

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Hurley, P.K. and Cherkaoui, K. and McDonnell, S. and Hughes, G. and Groenland, A.W. (2007) Characterisation and passivation of interface defects in (1 0 0)/Si/SiO2/HfO2/TiN gate stacks. Microelectronics Reliability, 47 (8). pp. 1195-1201. ISSN 0026-2714

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Abstract:The density and energy distribution of electrically active interface defects in the (100)Si/SiO2/HfO2 system are presented. Experimental results are analysed for HfO2 thin films deposited by atomic layer deposition and metal-organic chemical vapour deposition on (100)Si substrates.
The paper discusses the origin of the interface states, and their passivation in hydrogen over the temperature range 350–550 C.
Item Type:Article
Copyright:© 2007 Elsevier Science
Faculty:
Electrical Engineering, Mathematics and Computer Science (EEMCS)
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Link to this item:http://purl.utwente.nl/publications/62880
Official URL:http://dx.doi.org/10.1016/j.microrel.2006.09.030
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Metis ID: 241767