On the growth of native oxides on hydrogen-terminated silicon surfaces in dark and under illumination with light


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Kovalgin, A.Y. and Zinine, A. and Bankras, R.G. and Wormeester, H. and Poelsema, B. and Schmitz, J. (2006) On the growth of native oxides on hydrogen-terminated silicon surfaces in dark and under illumination with light. In: Proceedings of the Electrochemical Society, 29 okt - 3 nov 2006, Cancun, Mexico (pp. pp. 191-202).

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Abstract:After a cleaning procedure, a silicon surface can be terminated by Si-OH groups which results in a high chemical activity. As it is accepted, after removing the wet-chemically grown oxide layer using an HF solution, the surface becomes terminated with Si-H groups. This results in a chemically stable surface (e.g., retarded formation of native oxide). The stability over a period of several hours is reported [1].
Item Type:Conference or Workshop Item
Faculty:
Electrical Engineering, Mathematics and Computer Science (EEMCS)
Science and Technology (TNW)
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Link to this item:http://purl.utwente.nl/publications/62879
Official URL:http://dx.doi.org/10.1149/1.2356279
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