On the growth of native oxides on hydrogen-terminated silicon surfaces in dark and under illumination with light

Kovalgin, A.Y. and Zinine, A. and Bankras, R.G. and Wormeester, H. and Poelsema, B. and Schmitz, J. (2006) On the growth of native oxides on hydrogen-terminated silicon surfaces in dark and under illumination with light. In: Proceedings of the Electrochemical Society, 29 okt - 3 nov 2006, Cancun, Mexico.

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Abstract:	After a cleaning procedure, a silicon surface can be terminated by Si-OH groups which results in a high chemical activity. As it is accepted, after removing the wet-chemically grown oxide layer using an HF solution, the surface becomes terminated with Si-H groups. This results in a chemically stable surface (e.g., retarded formation of native oxide). The stability over a period of several hours is reported [1].
Item Type:	Conference or Workshop Item
Faculty:	Electrical Engineering, Mathematics and Computer Science (EEMCS) Science and Technology (TNW)
Research Group:	Semiconductor Components (SC) Physics of Interfaces and Nanomaterials (PIN)
Link to this item:	http://purl.utwente.nl/publications/62879
Official URL:	http://dx.doi.org/10.1149/1.2356279
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