Net Negative Charge in low-temperature SiO2 gate dielectric layers


Boogaard, A. and Kovalgin, A.Y. and Wolters, R.A.M. (2009) Net Negative Charge in low-temperature SiO2 gate dielectric layers. Microelectronic Engineering, 86 (7-9). pp. 1707-1710. ISSN 0167-9317

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Abstract:SiO2 gate dielectric layers (4–60 nm) were grown (0.6 nm/min) by plasma-enhanced chemical vapor deposition (PECVD) in strongly diluted silane plasmas at low substrate temperatures. In contrast to the well-accepted positive charge for thermally grown silicon dioxide, the net oxide charge was negative and a function of layer thickness. Our experiments suggested that the negative charge was created due to unavoidable oxidation of the silicon surface by plasma species, and the CVD component added a positive space charge to the deposited oxide. The net charge was negative under process conditions where plasma oxidation played a major role. Such conditions include low deposition rates and the growth of relatively thin layers.
Item Type:Article
Additional information:Oxide charge; PECVD silicon oxide; Plasma oxidation
Copyright:© 2009 Elsevier
Electrical Engineering, Mathematics and Computer Science (EEMCS)
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