Silicon based light emitters utilizing radiation from dislocations; electric field induced shift of the dislocation-related luminescence
Arguirov, T. and Mchedlidze, T. and Kittler, M. and Reiche, M. and Wilhelm, T. and Hoang, T. and Holleman, J. and Schmitz, J. (2009) Silicon based light emitters utilizing radiation from dislocations; electric field induced shift of the dislocation-related luminescence. Physica E: Low-dimensional Systems and Nanostructures, 41 (6). pp. 907-911. ISSN 1386-9477
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|Abstract:||Dislocation rich regions can be controllably formed at a certain location inside a silicon wafer. We studied the light emission properties of such regions located in an electric field of a p–n junction under different excitation conditions. It was found that the luminescence spectra of the dislocations are significantly influenced by the presence of the junction. The dislocation-related luminescence peak position appears red-shifted due to the built-in electric field. A suppression of that field by photogeneration of carriers or by applying a forward bias voltage at the junction leads to a gradual decrease in the energy position of the peaks. The dependence of the peak position on the electric field was found to be a quadratic function, similar to that observed for semiconductor nanostructures. We show that the shift of the peak position is due to the Stark effect on dislocation-related excitonic states. The characteristic constant of the shift, obtained by fitting the data with the quadratic Stark effect equation, was 0.0186 meV/(kV/cm)2.
The observed effect opens new possibilities for integration of a silicon based light emitter, combining the radiation from dislocations with a Stark effect based modulator.
|Copyright:||© 2009 Elsevier|
Electrical Engineering, Mathematics and Computer Science (EEMCS)
|Link to this item:||http://purl.utwente.nl/publications/62784|
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