Silicon based light emitters utilizing radiation from dislocations; electric field induced shift of the dislocation-related luminescence

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Arguirov, T. and Mchedlidze, T. and Kittler, M. and Reiche, M. and Wilhelm, T. and Hoang, T. and Holleman, J. and Schmitz, J. (2009) Silicon based light emitters utilizing radiation from dislocations; electric field induced shift of the dislocation-related luminescence. Physica E: Low-dimensional Systems and Nanostructures, 41 (6). pp. 907-911. ISSN 1386-9477

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Abstract:Dislocation rich regions can be controllably formed at a certain location inside a silicon wafer. We studied the light emission properties of such regions located in an electric field of a p–n junction under different excitation conditions. It was found that the luminescence spectra of the dislocations are significantly influenced by the presence of the junction. The dislocation-related luminescence peak position appears red-shifted due to the built-in electric field. A suppression of that field by photogeneration of carriers or by applying a forward bias voltage at the junction leads to a gradual decrease in the energy position of the peaks. The dependence of the peak position on the electric field was found to be a quadratic function, similar to that observed for semiconductor nanostructures. We show that the shift of the peak position is due to the Stark effect on dislocation-related excitonic states. The characteristic constant of the shift, obtained by fitting the data with the quadratic Stark effect equation, was 0.0186 meV/(kV/cm)2.
The observed effect opens new possibilities for integration of a silicon based light emitter, combining the radiation from dislocations with a Stark effect based modulator.
Item Type:Article
Copyright:© 2009 Elsevier
Faculty:
Electrical Engineering, Mathematics and Computer Science (EEMCS)
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Link to this item:http://purl.utwente.nl/publications/62784
Official URL:http://dx.doi.org/10.1016/j.physe.2008.08.045
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Metis ID: 263377