Electrical properties of low pressure chemical vapor deposited silicon nitride thin films for temperatures up to 650 °C

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Tiggelaar, R.M. and Groenland, A.W. and Sanders, R.G.P. and Gardeniers, J.G.E. (2009) Electrical properties of low pressure chemical vapor deposited silicon nitride thin films for temperatures up to 650 °C. Journal of Applied Physics, 105 (3). 033714. ISSN 0021-8979

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Abstract:The results of a study on electrical conduction in low pressure chemical vapor deposited silicon nitride thin films for temperatures up to 650 °C are described. Current density versus electrical field characteristics are measured as a function of temperature for 100 and 200 nm thick stoichiometric (Si3N4) and low stress silicon-rich (SiRN) films. For high E-fields and temperatures up to 500 °C conduction through Si3N4 can be described well by Frenkel–Poole transport with a barrier height of ∼ 1.10 eV, whereas for SiRN films Frenkel–Poole conduction prevails up to 350 °C with a barrier height of ∼ 0.92 eV. For higher temperatures, dielectric breakdown of the Si3N4 and SiRN films occurred before the E-field was reached above which Frenkel–Poole conduction dominates. A design graph is given that describes the maximum E-field that can be applied over silicon nitride films at high temperatures before electrical breakdown occurs.
Item Type:Article
Copyright:© 2009 American Institute of Physics
Faculty:
Electrical Engineering, Mathematics and Computer Science (EEMCS)
Science and Technology (TNW)
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Link to this item:http://purl.utwente.nl/publications/62744
Official URL:http://dx.doi.org/10.1063/1.3078027
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