Impact of metal-ion contaminated silica particles on gate oxide integrity

Rink, Ingrid and Wali, Faisal and Knotter, D.M. (2009) Impact of metal-ion contaminated silica particles on gate oxide integrity. Solid State Phenomena, 145-14 . pp. 131-134. ISSN 1012-0394

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Abstract:	The impact of metal-ion contamination (present on wafer surface before oxidation) on gate oxide integrity (GOI) is well known in literature, which is not the case for clean silica particles [1, 2]. However, it is known that particles present in ultra-pure water (UPW) decrease the random yield in semiconductor manufacturing [3]. The presence of silica in UPW is common knowledge. UPW has also a certain content of metal ions, which can be attached to silica. That means, when a wafer is in contact with UPW metal ion can directly and/or in form of a silica-metal conglomerate be attached to the wafer surface. That means, it is not known in which form metal-ion contamination will deteriorate GOI the most. In order to receive more clarity in this field a short-loop study was set up, where we want distinguish between the impacts of - low metal ion contamination (Calcium), - clean silica particles (330nm) contamination, - silica particles with metal-ion core (330nm) contamination, and - metal-ion contamination at similar concentration as the metal-ion core of the particles on GOI (uniform and none uniform distribution).
Item Type:	Article
Faculty:	Electrical Engineering, Mathematics and Computer Science (EEMCS)
Research Group:	Semiconductor Components (SC)
Link to this item:	http://purl.utwente.nl/publications/62730
Official URL:	http://dx.doi.org/10.4028/www.scientific.net/SSP.145-146.131
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