Fabrication of a silicon oxide stamp by edge lithography reinforced with silicon nitride for nanoimprint lithography

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Zhao, Y. and Berenschot, J.W. and Boer, M.J. de and Jansen, H.V. and Tas, N.R. and Huskens, J. and Elwenspoek, M.C. (2008) Fabrication of a silicon oxide stamp by edge lithography reinforced with silicon nitride for nanoimprint lithography. Journal of Micromechanics and Microengineering, 18 (18). 064013. ISSN 0960-1317

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Abstract:The fabrication of a stamp reinforced with silicon nitride is presented for its use in nanoimprint lithography. The fabrication process is based on edge lithography using conventional optical lithography and wet anisotropic etching of 110 silicon wafers. SiO2 nano-ridges of 20 nm in width were fabricated. A silicon rich nitride layer is deposited over the original SiO2 nano-ridges to improve the ridge strength and to achieve a positive tapered shape which is beneficial for nanoimprinting. A replica of the nano-ridges with silicon rich nitride shield is obtained by imprinting the stamp into thermoplastic nanoimprint polymer
mr-I 7010E
Item Type:Article
Copyright:© 2008 IOP Publishing
Faculty:
Electrical Engineering, Mathematics and Computer Science (EEMCS)
Science and Technology (TNW)
Research Group:
Link to this item:http://purl.utwente.nl/publications/62640
Official URL:http://dx.doi.org/10.1088/0960-1317/18/6/064013
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