Energy band offset extraction – a comparative study –
Steen, J.-L.P.J. van der and Hueting, R.J.E. and Schmitz, J. (2008) Energy band offset extraction – a comparative study –. In: 11th annual workshop on semiconductor advances for future electronics and sensors, SAFE 2008, 27-28 Nov 2008, Veldhoven, The Netherlands (pp. pp. 592-595).
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|Abstract:||Structural quantum confinement in thin silicon double-gate MOSFETs has been quantified using the temperature dependence of the subthreshold current. The results were compared with the shifts in threshold voltage. Data was obtained from simulations after initial verification with experimental data.
This study demonstrates that with the temperature dependence of the subthreshold current, shifts in the valence and conduction band edge can be extracted separately from changes in mobility and density of states, making this method more accurate than the commonly used threshold voltage method.
|Item Type:||Conference or Workshop Item|
Electrical Engineering, Mathematics and Computer Science (EEMCS)
|Link to this item:||http://purl.utwente.nl/publications/62613|
|Export this item as:||BibTeX|
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Metis ID: 255005