Charge plasma diode - a novel device concept


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Rajasekharan, B. and Hueting, R.J.E. and Salm, C. and Hoang, T. and Schmitz, J. (2008) Charge plasma diode - a novel device concept. In: Proceedings of the 11th annual workshop on semiconductor advances for future electronics and sensors (SAFE 2008), 27-28 Nov 2008, Veldhoven, The Netherlands (pp. pp. 576-579).

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Abstract:We propose a new device concept called charge plasma (CP) diode [1]. The diodes are with metal/silicided contacts of different workfunctions and thin intrinsic region in between. The workfunctions and layer thicknesses are chosen such that an electron plasma is formed on one side of the silicon body and a hole plasma on the other, i.e. a CP p-n diode is formed. The main advantages of these devices are low temperature budget and no dopant implantation is necessary in thin silicon layers [2,3,4]. We begin by discussing some important results from our silicon p-i-n diodes before moving on to the novel device concept of CP diodes.
Item Type:Conference or Workshop Item
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Electrical Engineering, Mathematics and Computer Science (EEMCS)
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Link to this item:http://purl.utwente.nl/publications/62611
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