Deposition of High-Quality SiO2 Insulating Films at Low Temperatures by means of Remote PECVD


Boogaard, A. and Roesthuis, R. and Brunets, I. and Aarnink, A.A.I. and Kovalgin, A.Y. and Holleman, J. and Wolters, R.A.M. and Schmitz, J. (2008) Deposition of High-Quality SiO2 Insulating Films at Low Temperatures by means of Remote PECVD. In: Proceedings of the 11th annual workshop on semiconductor advances for future electronics and sensors (SAFE 2008), 27-28 Nov 2008, Veldhoven, The Netherlands (pp. pp. 452-456).

[img] PDF
Restricted to UT campus only
: Request a copy
Abstract:Silicon dioxide films were deposited by means of remote inductively coupled plasma enhanced chemical vapor deposition (ICPECVD) in Ar-N2O-SiH4 plasma at 150 °C and pressures between 1 and 6 Pa. The gas phase contained 0.08% of SiH4 and 18% of N2O. We observed that, at a total pressure of 1 Pa, the oxide films were formed with a density equal to that of thermally grown oxide. The films had a low oxide charge. Deposition at higher pressures resulted in the formation of oxides having a lower density than the film deposited at 1 Pa, and a higher oxide charge. We measured a strong dependence of the oxide charge on the film thickness. The films deposited at 1 Pa further exhibited leakage currents at an electric field strength of 6.5 MV/cm which were comparable to the leakage currents known for thermally grown (1000°C) oxides. The film deposited at 2 Pa also exhibited a low leakage current, but the current increase was observed at lower electric fields compared to the 1 Pa film. The films deposited at 6 Pa exhibited significantly higher leakage currents.
Item Type:Conference or Workshop Item
Electrical Engineering, Mathematics and Computer Science (EEMCS)
Research Group:
Link to this item:
Export this item as:BibTeX
HTML Citation
Reference Manager


Repository Staff Only: item control page

Metis ID: 254993