Deposition of High-Quality SiO2 Insulating Films at Low Temperatures by means of Remote PECVD


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Boogaard, A. and Roesthuis, R. and Brunets, I. and Aarnink, A.A.I. and Kovalgin, A.Y. and Holleman, J. and Wolters, R.A.M. and Schmitz, J. (2008) Deposition of High-Quality SiO2 Insulating Films at Low Temperatures by means of Remote PECVD. In: Proceedings of the 11th annual workshop on semiconductor advances for future electronics and sensors (SAFE 2008), 27-28 Nov 2008, Veldhoven, The Netherlands (pp. pp. 452-456).

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Abstract:Silicon dioxide films were deposited by means of remote inductively coupled plasma enhanced chemical vapor deposition (ICPECVD) in Ar-N2O-SiH4 plasma at 150 °C and pressures between 1 and 6 Pa. The gas phase contained 0.08% of SiH4 and 18% of N2O. We observed that, at a total pressure of 1 Pa, the oxide films were formed with a density equal to that of thermally grown oxide. The films had a low oxide charge. Deposition at higher pressures resulted in the formation of oxides having a lower density than the film deposited at 1 Pa, and a higher oxide charge. We measured a strong dependence of the oxide charge on the film thickness. The films deposited at 1 Pa further exhibited leakage currents at an electric field strength of 6.5 MV/cm which were comparable to the leakage currents known for thermally grown (1000°C) oxides. The film deposited at 2 Pa also exhibited a low leakage current, but the current increase was observed at lower electric fields compared to the 1 Pa film. The films deposited at 6 Pa exhibited significantly higher leakage currents.
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Electrical Engineering, Mathematics and Computer Science (EEMCS)
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