Extracting energy band offsets on Thin Silicon–On–Insulator MOSFETs

Steen van der, J.-L.P.J. and Hueting, R.J.E. and Schmitz, J. (2008) Extracting energy band offsets on Thin Silicon–On–Insulator MOSFETs. In: 38th European Solid-State Device Research Conference, 15-19 September 2008, Edinburgh, Schotland.

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Abstract:	Structural quantum confinement in thin silicon double-gate MOSFETs has been quantified using the temperature dependence of the subthreshold current. The results were compared with the shifts in threshold voltage. Data was obtained from simulations after initial verification with experimental data. This study demonstrates that with the temperature dependence of the subthreshold current, shifts in the valence and conduction band edge can be extracted separately from changes in mobility and density of states, making this method more accurate than the commonly used threshold voltage method.
Item Type:	Conference or Workshop Item
Copyright:	© 2008 IEEE
Faculty:	Electrical Engineering, Mathematics and Computer Science (EEMCS)
Research Group:	Semiconductor Components (SC)
Link to this item:	http://purl.utwente.nl/publications/62600
Official URL:	http://dx.doi.org/10.1109/ESSDERC.2008.4681743
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