Extracting energy band offsets on Thin Silicon–On–Insulator MOSFETs
Steen van der, J.-L.P.J. and Hueting, R.J.E. and Schmitz, J. (2008) Extracting energy band offsets on Thin Silicon–On–Insulator MOSFETs. In: 38th European Solid-State Device Research Conference, 15-19 September 2008, Edinburgh, Schotland.
Restricted to UT campus only: Request a copy
|Abstract:||Structural quantum confinement in thin silicon double-gate MOSFETs has been quantified using the temperature dependence of the subthreshold current. The results were compared with the shifts in threshold voltage. Data was obtained from simulations after initial verification with experimental data.
This study demonstrates that with the temperature dependence of the subthreshold current, shifts in the valence and conduction band edge can be extracted separately from changes in mobility and density of states, making this method more accurate than the commonly used threshold voltage method.
|Item Type:||Conference or Workshop Item|
|Copyright:||© 2008 IEEE|
Electrical Engineering, Mathematics and Computer Science (EEMCS)
|Link to this item:||http://purl.utwente.nl/publications/62600|
|Export this item as:||BibTeX|
Daily downloads in the past month
Monthly downloads in the past 12 months
Repository Staff Only: item control page
Metis ID: 254985