MOSFET Degradation Under RF Stress

Sasse, Guido T. and Kuper, Fred G. and Schmitz, Jurriaan (2008) MOSFET Degradation Under RF Stress. IEEE Transactions on Electron Devices, 55 (11). pp. 3167-3174. ISSN 0018-9383

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Abstract:	We report on the degradation of MOS transistors under RF stress. Hot-carrier degradation, negative-bias temperature instability, and gate dielectric breakdown are investigated. The findings are compared to established voltage- and field-driven models. The experimental results indicate that the existing models are well applicable into the gigahertz range to describe the degradation of MOS transistors in an RF circuit. The probability of gate dielectric breakdown appears to reduce rapidly at such high stress frequencies, increasing the design margin for RF power circuits.
Item Type:	Article
Copyright:	© 2008 IEEE
Faculty:	Electrical Engineering, Mathematics and Computer Science (EEMCS)
Research Group:	Semiconductor Components (SC)
Link to this item:	http://purl.utwente.nl/publications/62597
Official URL:	http://dx.doi.org/10.1109/TED.2008.2004650
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