RF CMOS reliability simulations

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Sasse, Guido T. and Acar, Mustafa and Kuper, Fred G. and Schmitz, J. (2008) RF CMOS reliability simulations. Microelectronics Reliability, 48 (8-9). pp. 1581-1585. ISSN 0026-2714

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Abstract:We present a simulation approach to assess the reliability of an RF CMOS circuit under user conditions, based on existing DC degradation models for gate-oxide breakdown and hot-carrier degradation. The simulator allows for lifetime prediction of circuits that can withstand multiple breakdown events. Simulation results show that three power amplifiers with comparable initial circuit performance show an astronomic difference in reliability. The tool thus proves to be an asset in the analog design process.
Item Type:Article
Copyright:© 2008 Elsevier Science
Faculty:
Electrical Engineering, Mathematics and Computer Science (EEMCS)
Research Group:
Link to this item:http://purl.utwente.nl/publications/62596
Official URL:http://dx.doi.org/10.1016/j.microrel.2008.06.017
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Metis ID: 254979