Reliability aspects of a radiation detector fabricated by post-processing a standard CMOS chip

Salm, Cora and Blanco Carballo, Víctor M. and Melai, Joost and Schmitz, Jurriaan (2008) Reliability aspects of a radiation detector fabricated by post-processing a standard CMOS chip. Microelectronics Reliability, 48 (8-9). pp. 1139-1143. ISSN 0026-2714

PDF
Restricted to UT campus only: Request a copy
485Kb

Abstract:	This paper describes various reliability concerns of the newly developed INGRID detector. This radiation detector is fabricated by waferscale CMOS post-processing; fresh detectors show excellent performance. Since the microsystems will be used unpackaged they are susceptible to all kinds of environmental conditions. The device passed tests of micro-ESD, radiation hardness, dielectric strength; but humidity tests show one weakness of SU-8 as a structural material. Already after 1 day of exposure to a humid condition the structural integrity, as measured by a shear stress test, is dramatically lowered. Dry storage of these devices is therefore a necessity. KMPR photoresist shows promising results as an alternative structural material.
Item Type:	Article
Copyright:	© 2008 Elsevier Science
Faculty:	Electrical Engineering, Mathematics and Computer Science (EEMCS)
Research Group:	Semiconductor Components (SC)
Link to this item:	http://purl.utwente.nl/publications/62594
Official URL:	http://dx.doi.org/10.1016/j.microrel.2008.06.038
Export this item as:	BibTeX EndNote HTML Citation Reference Manager

Repository Staff Only: item control page

Metis ID: 254976