Reliability aspects of a radiation detector fabricated by post-processing a standard CMOS chip

Share/Save/Bookmark

Salm, Cora and Blanco Carballo, Víctor M. and Melai, Joost and Schmitz, Jurriaan (2008) Reliability aspects of a radiation detector fabricated by post-processing a standard CMOS chip. Microelectronics Reliability, 48 (8-9). pp. 1139-1143. ISSN 0026-2714

[img] PDF
Restricted to UT campus only
: Request a copy
497kB
Abstract:This paper describes various reliability concerns of the newly developed INGRID detector. This radiation detector is fabricated by waferscale CMOS post-processing; fresh detectors show excellent performance. Since the microsystems will be used unpackaged they are susceptible to all kinds of environmental conditions.
The device passed tests of micro-ESD, radiation hardness, dielectric strength; but humidity tests show one weakness of SU-8 as a structural material. Already after 1 day of exposure to a humid condition the structural integrity, as measured by a shear stress test, is dramatically lowered. Dry storage of these devices is therefore a necessity. KMPR photoresist shows promising results as an alternative structural material.
Item Type:Article
Copyright:© 2008 Elsevier Science
Faculty:
Electrical Engineering, Mathematics and Computer Science (EEMCS)
Research Group:
Link to this item:http://purl.utwente.nl/publications/62594
Official URL:http://dx.doi.org/10.1016/j.microrel.2008.06.038
Export this item as:BibTeX
EndNote
HTML Citation
Reference Manager

 

Repository Staff Only: item control page

Metis ID: 254976