Reliability aspects of a radiation detector fabricated by post-processing a standard CMOS chip
Salm, Cora and Blanco Carballo, Víctor M. and Melai, Joost and Schmitz, Jurriaan (2008) Reliability aspects of a radiation detector fabricated by post-processing a standard CMOS chip. Microelectronics Reliability, 48 (8-9). pp. 1139-1143. ISSN 0026-2714
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|Abstract:||This paper describes various reliability concerns of the newly developed INGRID detector. This radiation detector is fabricated by waferscale CMOS post-processing; fresh detectors show excellent performance. Since the microsystems will be used unpackaged they are susceptible to all kinds of environmental conditions.
The device passed tests of micro-ESD, radiation hardness, dielectric strength; but humidity tests show one weakness of SU-8 as a structural material. Already after 1 day of exposure to a humid condition the structural integrity, as measured by a shear stress test, is dramatically lowered. Dry storage of these devices is therefore a necessity. KMPR photoresist shows promising results as an alternative structural material.
|Copyright:||© 2008 Elsevier Science|
Electrical Engineering, Mathematics and Computer Science (EEMCS)
|Link to this item:||http://purl.utwente.nl/publications/62594|
|Export this item as:||BibTeX|
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