Amplification in epitaxially grown $Er:(Gd, Lu)_2O_3$ waveguides for active integrated optical devices

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Kahn, Andreas and Kühn, Henning and Heinrich, Sebastian and Petermann, Klaus and Bradley, Jonathan D.B. and Wörhoff, Kerstin and Pollnau, Markus and Kuzminykh, Y. and Huber, G. (2008) Amplification in epitaxially grown $Er:(Gd, Lu)_2O_3$ waveguides for active integrated optical devices. Journal of the Optical Society of America B: Optical Physics, 25 (11). pp. 1850-1853. ISSN 0740-3224

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Abstract:Monocrystalline lattice matched $Er(0.6$ $at.$ %):$(Gd,Lu)_2O_3$ films with nearly atomically flat surfaces and thicknesses up to 3 μm have been grown on $Y_2O_3$ substrates using pulsed laser deposition. The emission cross sections were comparable with the ones of $Er:Y_2O_3$ bulk crystals, showing only a marginal spectral broadening. Rib channel waveguiding could be demonstrated after structuring the films with reactive ion etching. Gain measurements have been performed and the results compared with a theoretical gain spectrum. A gain of 5.9 dB/cm could be measured at 1535.5 nm through in-band pumping at 1480 nm. The scattering losses in such a 7 mm long rib waveguide have been determined to be below 4.4 dB at 632.8 nm. An extrapolation to the gain wavelength with the $λ^{−4}$-Rayleigh law of scattering resulted in losses of 0.2 dB/cm at 1.5 μm.
Item Type:Article
Copyright:© 2008 Optical Society of America
Faculty:
Electrical Engineering, Mathematics and Computer Science (EEMCS)
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Link to this item:http://purl.utwente.nl/publications/62582
Official URL:http://dx.doi.org/10.1364/JOSAB.25.001850
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