Optimization of waveguide technology for active integrated optical devices
Wörhoff, Kerstin and Bradley, Jonathan and Ay, Feridun and Geskus, Dimitri and Blauwendraat, Tom and Pollnau, Markus (2008) Optimization of waveguide technology for active integrated optical devices. In: Silicon Photonics and Photonic Integrated Circuits, 7-10 April 2008, Strasbourg, France.
Restricted to UT campus only: Request a copy
|Abstract:||Amorphous is a promising host material for active integrated optical applications such as tunable rare-earth-ion-doped laser and amplifier devices. The fabrication of slab and channel waveguides has been investigated and optimized by exploiting reactive co-sputtering and ICP reactive ion etching, respectively. The Al2O3 layers are grown reliably and reproducibly on thermally oxidized Si-wafers at deposition rates of 2-4 nm/min. Optical loss of as-deposited planar waveguides as low as 0.11±0.05 dB/cm at 1.5-μm wavelength has been demonstrated. The channel waveguide fabrication is based on chemistry in combination with standard photoresist and lithography processes. Upon process optimization channel waveguides with up to 600-nm etch depth, smooth side walls and optical losses as low as 0.21±0.05 dB/cm have been realized. Rare-earth-ion doping has been investigated by co-sputtering from a metallic Er target during layer growth. At the relevant dopant levels lifetimes of the level as high as 7 ms have been measured. Gain measurements have been carried out over 6.4-cm propagation length in a 700-nm-thick Er-doped waveguide. Net optical gain has been obtained over a 35-nm-wide wavelength range (1525-1560 nm) with a maximum of 4.9 dB.
|Item Type:||Conference or Workshop Item|
|Copyright:||© 2008 SPIE|
Electrical Engineering, Mathematics and Computer Science (EEMCS)
|Link to this item:||http://purl.utwente.nl/publications/62577|
|Export this item as:||BibTeX|
Daily downloads in the past month
Monthly downloads in the past 12 months
Repository Staff Only: item control page
Metis ID: 254946