Characteristics of high quality ZnO thin films deposited by pulsed laser deposition

Craciun, V. and Elders, J. and Gardeniers, J.G.E. and Boyd, Ian W. (1994) Characteristics of high quality ZnO thin films deposited by pulsed laser deposition. Applied Physics Letters, 65 (23). pp. 2963-2965. ISSN 0003-6951

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Abstract:	This paper show that under optimized deposition condition, films can be grown having a full width at half maximum (FWHM) value of the (002) x-ray diffraction (XRD) line a factor of 4 smaller than the previously published results using PLD and among the best reported so far by any technique. Under optimized conditions, c-axis oriented ZnO films having a FWHM value of the (002) XRD reflection line less than 15°, electrical resistivities around 5 × 10-2 Ω cm and optical transmittance higher than 85% in the visible region of the spectrum were obtained. Refractive index was around 1.98 and the Eg = 3.26 eV, values characteristic of very high quality ZnO thin films.
Item Type:	Article
Copyright:	© 1994 American Institute of Physics
Faculty:	Science and Technology (TNW)
Research Group:	Mesoscale Chemical Systems (MCS)
Link to this item:	http://purl.utwente.nl/publications/62540
Official URL:	http://dx.doi.org/10.1063/1.112478
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