Characteristics of high quality ZnO thin films deposited by pulsed laser deposition

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Craciun, V. and Elders, J. and Gardeniers, J.G.E. and Boyd, Ian W. (1994) Characteristics of high quality ZnO thin films deposited by pulsed laser deposition. Applied Physics Letters, 65 (23). pp. 2963-2965. ISSN 0003-6951

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Abstract:This paper show that under optimized deposition condition, films can be grown having a full width at half maximum (FWHM) value of the (002) x-ray diffraction (XRD) line a factor of 4 smaller than the previously published results using PLD and among the best reported so far by any technique. Under optimized conditions, c-axis oriented ZnO films having a FWHM value of the (002) XRD reflection line less than 15°, electrical resistivities around 5 × 10-2 Ω cm and optical transmittance higher than 85% in the visible region of the spectrum were obtained. Refractive index was around 1.98 and the Eg = 3.26 eV, values characteristic of very high quality ZnO thin films.
Item Type:Article
Copyright:© 1994 American Institute of Physics
Faculty:
Science and Technology (TNW)
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Link to this item:http://purl.utwente.nl/publications/62540
Official URL:http://dx.doi.org/10.1063/1.112478
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