Characterisation of sol-gel PZT films on Pt-coated substrates

Gardeniers, J.G.E. and Smith, A. and Cobianu, C. (1995) Characterisation of sol-gel PZT films on Pt-coated substrates. Journal of Micromechanics and Microengineering, 5 (2). pp. 153-155. ISSN 0960-1317

Preview

PDF
183Kb

Abstract:	A conventional sol-gel process was used to spin-cast PZT films on oxidized Si wafers coated with sputtered Pt layers. After annealing at 550 degrees C-800 degrees C, the resulting perovskite-type PZT films showed different textures and surface morphologies, depending on whether or not a Ti adhesion layer was used. If a Ti layer was present, Ti diffusion into and through the Pt film leads to a compound Pt3Ti, which facilitates crystallization of the perovskite PZT phase; without Ti, crystallization is more difficult and occurs via the growth of dendritic crystallites. Several optical and electrical properties of the PZT films have been measured; the first results indicate high dielectric constants ( epsilon approximately=480) and acceptable ferroelectric behaviour.
Item Type:	Article
Copyright:	© 1995 Institute of Physics\
Faculty:	Science and Technology (TNW)
Research Group:	Mesoscale Chemical Systems (MCS)
Link to this item:	http://purl.utwente.nl/publications/62530
Official URL:	http://dx.doi.org/10.1088/0960-1317/5/2/025
Export this item as:	BibTeX EndNote HTML Citation Reference Manager

Show download statistics for this publication

Repository Staff Only: item control page

Metis ID: 111583