Characterisation of sol-gel PZT films on Pt-coated substrates

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Gardeniers, J.G.E. and Smith, A. and Cobianu, C. (1995) Characterisation of sol-gel PZT films on Pt-coated substrates. Journal of Micromechanics and Microengineering, 5 (2). pp. 153-155. ISSN 0960-1317

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Abstract:A conventional sol-gel process was used to spin-cast PZT films on oxidized Si wafers coated with sputtered Pt layers. After annealing at 550 degrees C-800 degrees C, the resulting perovskite-type PZT films showed different textures and surface morphologies, depending on whether or not a Ti adhesion layer was used. If a Ti layer was present, Ti diffusion into and through the Pt film leads to a compound Pt3Ti, which facilitates crystallization of the perovskite PZT phase; without Ti, crystallization is more difficult and occurs via the growth of dendritic crystallites. Several optical and electrical properties of the PZT films have been measured; the first results indicate high dielectric constants ( epsilon approximately=480) and acceptable ferroelectric behaviour.
Item Type:Article
Copyright:© 1995 Institute of Physics\
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Science and Technology (TNW)
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Link to this item:http://purl.utwente.nl/publications/62530
Official URL:http://dx.doi.org/10.1088/0960-1317/5/2/025
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